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2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 104, p. Article ID: 153112-Article in journal (Refereed) Published
Abstract [en]
We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (~0.0001%) exhibit a low resistance of a few kΩ at 300K and a 4% positive MR at 1.6K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several MΩ at 300K and a large negative MR of 85% at 1.6K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga1-xMnxAs nanowires for future nanospintronics.
National Category
Condensed Matter Physics
Research subject
Physics, Condensed Matter Physics
Identifiers
urn:nbn:se:lnu:diva-33558 (URN)10.1063/1.4870423 (DOI)000335145200060 ()2-s2.0-84899622402 (Scopus ID)
External cooperation:
2014-04-022014-04-022017-12-05Bibliographically approved