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Quantum Hall edge states in topological insulator nanoribbons
Linnaeus University, Faculty of Technology, Department of Physics and Electrical Engineering. KTH Royal Inst Technol ; Stockholm University.ORCID iD: 0000-0002-7831-7214
Linnaeus University, Faculty of Technology, Department of Physics and Electrical Engineering.ORCID iD: 0000-0003-4489-7561
Univ Texas Austin, USA.
2016 (English)In: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 94, no 12, article id 121409Article in journal (Refereed) Published
Abstract [en]

We present a microscopic theory of the chiral one-dimensional electron gas system localized on the sidewalls of magnetically doped Bi2Se3-family topological insulator nanoribbons in the quantum anomalous Hall effect (QAHE) regime. Our theory is based on a simple continuum model of sidewall states whose parameters are extracted from detailed ribbon and film geometry tight-binding model calculations. In contrast to the familiar case of the quantum Hall effect in semiconductor quantum wells, the number of microscopic chiral channels depends simply and systematically on the ribbon thickness and on the position of the Fermi level within the surface state gap. We use our theory to interpret recent transport experiments that exhibit nonzero longitudinal resistance in samples with accurately quantized Hall conductances.

Place, publisher, year, edition, pages
2016. Vol. 94, no 12, article id 121409
National Category
Physical Sciences
Research subject
Natural Science, Physics
Identifiers
URN: urn:nbn:se:lnu:diva-57610DOI: 10.1103/PhysRevB.94.121409ISI: 000384070000003Scopus ID: 2-s2.0-84990882880OAI: oai:DiVA.org:lnu-57610DiVA, id: diva2:1040489
Available from: 2016-10-27 Created: 2016-10-25 Last updated: 2017-11-29Bibliographically approved

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Pertsova, AnnaCanali, Carlo M.

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