Two 130nm CMOS class-D RF power amplifiers suitable for polar transmitter architectures
2008 (English)In: 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008., IEEE Press, 2008, 1380-1383 p.Conference paper (Refereed)
Two class-D RF power amplifiers consisting of CMOS inverter chains have been designed and measured. The first amplifier operates at 1GHz and has a maximum output power of 12dBm, whereas the second operates at 1.5GHz and outputs a maximum of 6dBm. The amplifiers have been characterized for use in two different polar transmitter architectures, Pulse Width Modulation by Variable Gate Bias (PWMVGB) and Envelope Elimination and Restoration (EER). Using a standard 130nm digital CMOS process and off-chip passive components, maximum drain efficiencies of 32% and 39%, respectively, are achieved. The two amplifiers are compared with respect to output power and drain efficiency, including a qualitative analysis of losses. Moreover, their use in the two polar transmitter architectures is discussed.
Place, publisher, year, edition, pages
IEEE Press, 2008. 1380-1383 p.
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:lnu:diva-61595DOI: 10.1109/ICSICT.2008.4734800ISI: 000265971002021ISBN: 978-1-4244-2185-5 (print)ISBN: 978-1-4244-2186-2 OAI: oai:DiVA.org:lnu-61595DiVA: diva2:1083603
International conference on solid-state and integrated circuit technology, 20-23 Oct. 2008, Beijing, China,