Comparing polar transmitter architectures using a GaN HEMT power amplifier
2008 (English)In: Abstracts book of The Gigahertz Symposium 2008: 5-6 March, 2008, Chalmers University of Technology, Göteborg, Sweden / [ed] Jan Grahn, Gothenburg: Chalmers University of Technology , 2008, 21-21 p.Conference paper, Abstract (Other academic)
A power amplifier (PA) with variable gate bias is compared to an Envelope Elimination and Restoration (EER) configuration. Each use the lowfrequency envelope and high-frequency phase component of the signal. The test circuit is implemented using a discrete GaN HEMT power device. Measurements show that the EER architecture maintains a relatively high drain efficiency for a wide output power range, while the PA with variable gate bias shows a significant drop in efficiency for lower output powers.
Place, publisher, year, edition, pages
Gothenburg: Chalmers University of Technology , 2008. 21-21 p.
IdentifiersURN: urn:nbn:se:lnu:diva-61596OAI: oai:DiVA.org:lnu-61596DiVA: diva2:1083620
The Gigahertz Symposium 2008, 5-6 March, 2008, Chalmers University of Technology, Göteborg, Sweden