A GaN HEMT Power Amplifier with Variable Gate Bias for Envelope and Phase Signals
2007 (English)In: Proceedings of Norchip 2007, Aalborg, Denmark, 2007, Aalborg, Denmark: Institute of Electrical and Electronics Engineers (IEEE), 2007Conference paper (Refereed)
This paper describes the design, simulation and measurement of a GaN power amplifier suitable for envelope and phase signal combination. The low-frequency envelope signal is used to vary the gate (bias) voltage of the device, resulting in a pulse width modulated drain voltage, while modulation of supply voltage or current is avoided. The test circuit is implemented using a discrete GaN HEMT power amplifier and discrete surface-mount passive components assembled on a PCB. Measurements showed a maximum drain efficiency of 59% at 360 MHz, at an output power of 29 dBm. The output power as a function of the gate bias voltage varied between 3 and 29 dBm, with the drain efficiency varying between 6 and 59%.
Place, publisher, year, edition, pages
Aalborg, Denmark: Institute of Electrical and Electronics Engineers (IEEE), 2007.
IdentifiersURN: urn:nbn:se:lnu:diva-61599DOI: 10.1109/NORCHP.2007.4481050ISBN: 9781424415175 (print)OAI: oai:DiVA.org:lnu-61599DiVA: diva2:1083622
Norchip 2007, Aalborg, Denmark, 19-20 Nov. 2007