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Over-bias light emission due to higher order quantum noise of a tunnel junction
Universit ̈at Konstanz, Germany.
Norwegian University of Science and Technology, Norway.ORCID iD: 0000-0001-5551-8980
Universit ̈at Konstanz, Germany.
2015 (English)In: 2015 International Conference on Noise and Fluctuations (ICNF), IEEE conference proceedings, 2015Conference paper (Refereed)
Abstract [en]

Understanding tunneling from an atomically sharp tip to a metallic surface requires to account for interactions on a nanoscopic scale. Inelastic tunneling of electrons generates emission of photons, whose energies intuitively should be limited by the applied bias voltage. However, experiments [Phys. Rev. Lett. 102, 057401 (2009)] indicate that more complex processes involving the interaction of electrons with plasmon polaritons lead to photon emission characterized by over-bias energies. We propose a model of this observation in analogy to the dynamical Coulomb blockade, originally developed for treating the electronic environment in mesoscopic circuits. We explain the experimental finding quantitatively by the correlated tunneling of two electrons interacting with an LRC circuit modeling the local plasmon-polariton mode. To explain the over-bias emission, the non-Gaussian statistics of the tunneling dynamics of the electrons is essential.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2015.
National Category
Condensed Matter Physics
Research subject
Physics, Condensed Matter Physics
Identifiers
URN: urn:nbn:se:lnu:diva-63813DOI: 10.1109/ICNF.2015.7288573ISBN: 978-1-4673-8336-3 (print)ISBN: 978-1-4673-8335-6 (electronic)OAI: oai:DiVA.org:lnu-63813DiVA: diva2:1095379
Conference
2015 International Conference on Noise and Fluctuations (ICNF), 2-6 June 2015, Xian, China
Available from: 2017-05-12 Created: 2017-05-12 Last updated: 2017-05-15Bibliographically approved

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Holmqvist, Cecilia
Condensed Matter Physics

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Citation style
  • apa
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  • asciidoc
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