Diluted ferromagnetic semiconductors combining ferromagnetic and semiconducting properties in one material provide numerous new functionalities, attractive for basic studies and potentially useful for novel device applications. The tailoring of the electronic structure in analogy to conventional semiconductors has yet to be explored. Here, we demonstrate the conservation of broken inversion symmetry and band structure tailoring for high-quality molecular-beam-epitaxy-grown (In,Ga,Mn)As films with 3% In plus 2.5% or 5.6% Mn using hard-x-ray photoelectron diffraction (hXPD) and momentum microscopy. Photon energies of 3-5 keV ensure that the results are not corrupted by surface effects, which are known to be strong in semiconductors. The missing inversion center of the GaAs host lattice leads to fingerprint-like hXPD signatures of As and Ga sites. For both concentrations, Mn predominantly occupies Ga substitutional sites. Momentum microscopy reveals a shift of the chemical potential with increasing Mn doping and a highly dispersing band, crossing the Fermi level for high Mn concentration. The Mn doping induces a pronounced modification of the spin-orbit split-off band.