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Realization of the Chern-insulator and axion-insulator phases in antiferromagnetic MnTe/Bi2(Se, Te)3/MnTe heterostructures
Linnaeus University, Faculty of Technology, Department of Physics and Electrical Engineering.
Linnaeus University, Faculty of Technology, Department of Physics and Electrical Engineering.ORCID iD: 0000-0003-1847-0863
Polish academy of science, Poland.
Polish academy of science, Poland.
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2021 (English)In: Physical review B (PRB), ISSN 2469-9950, Vol. 103, no 19, article id 1953078Article in journal (Refereed) Published
Abstract [en]

Breaking time-reversal symmetry in three-dimensional topological insulator thin films can lead to different topological quantum phases, such as the Chern insulator (CI) phase and the axion insulator (AI) phase. Using first-principles density functional theory methods, we investigate the onset of these two topological phases in a trilayer heterostructure consisting of a Bi2Se3 (Bi2Te3) TI thin film sandwiched between two antiferromagneticMnTe layers. We find that an orthogonal exchange field from the MnTe layers, stabilized by a small anisotropy barrier, opens an energy gap of the order of 10 meV at the Dirac point of the TI film. A topological analysis demonstrates that, depending on the relative orientation of the exchange field at the two interfaces, the total Chern number of the system is either C = 1 or C = 0, characteristic of the CI and AI phases, respectively. Nontopological surface states inside the energy-gap region, caused by the interface potential, complicate this identification. Remarkably though, the calculation of the anomalous Hall conductivity shows that such nontopological surface states do not affect the topology-induced transport properties. Given the size of the exchange gap, we estimate that gapless chiral edge states, leading to the quantum anomalous Hall effect, should emerge on the sidewalls of these heterostructures in the CI phase for widths > 200 nm. We also discuss the possibility of inducing transitions between the CI and the AI phases by means of the spin-orbit torque caused by the spin Hall effect in an adjacent conducting layer.

Place, publisher, year, edition, pages
American Physical Society, 2021. Vol. 103, no 19, article id 1953078
National Category
Condensed Matter Physics
Research subject
Physics, Condensed Matter Physics
Identifiers
URN: urn:nbn:se:lnu:diva-103438DOI: 10.1103/PhysRevB.103.195308ISI: 000655877500006Scopus ID: 2-s2.0-85106232777Local ID: 2021OAI: oai:DiVA.org:lnu-103438DiVA, id: diva2:1554676
Available from: 2021-05-17 Created: 2021-05-17 Last updated: 2023-01-18Bibliographically approved
In thesis
1. Topological Phase Transitions in Magnetic Nanostructures of Dirac Materials
Open this publication in new window or tab >>Topological Phase Transitions in Magnetic Nanostructures of Dirac Materials
2021 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Over the past two decades, the discovery of topological Dirac materials, such as topological insulators and semimetals, has defined a new paradigm in condensed matter physics and established new platforms for realizing spin electronic devices and quantum computing. The novel quantum properties of these materials, which are mainly due to the presence of strong spin-orbit coupling, are invariant under topological transformations, making them more resilient to structural disorder, electromagnetic and thermal fluctuations in comparison to the conventional silicon-based materials. Their topological nature, characterized by topological invariants, depends crucially on the global symmetries of the system, with time-reversal symmetry and inversion symmetry being the most important ones. If these symmetries are broken by external fields, it is possible to cause transitions between different topological phases. One of the main challenges in this field is to determine the physical conditions under which different non-trivial topological phases can be realized, detected, and manipulated.

The present thesis aims at investigating the onset of different topological phases and associated quantum phenomena in topological material nanostructures such as thin films and nanoribbons where time-reversal symmetry is broken by the presence of magnetism. Specifically, using theoretical and computational methods based on atomistic tight-binding models and density functional theory, we have addressed four problems: (i) the possibility of realizing both the Chern insulator and the axion insulator phase in the same heterostructure consisting of a TI thin film sandwiched by two antiferromagnetic layers; (ii)  the origin of the deviations from exact quantization of the elusive topological magneto-electric effect in TI thin films in the axion insulator phase. For this purpose we have introduced a novel approach based on a non-local side-wall response that treats the quantum anomalous Hall effect and the topological magnetoelectric effect on the same footing; (iii) signatures in quantum transport of different topological phases in two-dimensional (graphene) and three-dimensional (Bi2Se3) TI nanoribbons under different configurations of the exchange field; (iv) non-magnetic- and magnetic-impurity-induced topological phase transitions in topological semimetals, with the prediction of a coexisting Dirac-Weyl mixed-phase under some given conditions. The results of this theoretical work in part elucidate some fundamental issues of magnetic topological materials, but also give indications for the experimental realization of quantum phenomena which have important technological applications.

Place, publisher, year, edition, pages
Linnaeus University Press, 2021. p. 75
Series
Linnaeus University Dissertations ; 426
Keywords
Topological insulators, Magnetic materials, Quantum anomalous Hall effect, Topological magneto electric effect, Dirac semimetals, Weyl semimetals
National Category
Condensed Matter Physics
Research subject
Physics, Condensed Matter Physics
Identifiers
urn:nbn:se:lnu:diva-106200 (URN)9789189460201 (ISBN)9789189460218 (ISBN)
Public defence
2021-09-10, Ma1053K, Magna huset, 15:00 (English)
Opponent
Supervisors
Available from: 2021-08-20 Created: 2021-08-19 Last updated: 2024-03-06Bibliographically approved

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Pournaghavi, NezhatIslam, FhokrulCanali, Carlo M.

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