Benefits of implementing a duty-ratio controlled parallel-resonant converter with SiC MOSFETs instead of Si IGBTsShow others and affiliations
2021 (English)In: 2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe, IEEE, 2021Conference paper, Published paper (Refereed)
Abstract [en]
In this paper, the operation of a parallel resonant converter with a capacitive output filter that exploits the parasitic components of its transformer is described briefly. Measurements from a high power DC pulsed generator with Si IGBTs are obtained. Finally, the experimentally calculated losses of the Si IGBTs are compared with SiC MOSFETs' losses using simulations of the system. © 2021 EPE Association.
Place, publisher, year, edition, pages
IEEE, 2021.
Keywords [en]
high voltage power supplies, High-voltage conversion, resonant converters, silicon carbide (SiC), HVDC power transmission, Insulated gate bipolar transistors (IGBT), Power converters, Capacitive output filter, Duty ratios, High voltage power supply, High-voltages, Parallel resonant, Silicon carbide, Silicon carbide MOSFETs, Voltage conversion
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Physics, Electrotechnology
Identifiers
URN: urn:nbn:se:lnu:diva-112261DOI: 10.23919/epe21ecceeurope50061.2021.9570604ISI: 000832143901109Scopus ID: 2-s2.0-85119072767ISBN: 9789075815375 (print)OAI: oai:DiVA.org:lnu-112261DiVA, id: diva2:1656816
Conference
23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe, 6 September 2021 through 10 September 2021
2022-05-082022-05-082024-03-22Bibliographically approved