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Magnetic anisotropy of single Mn acceptors in GaAs in an external magnetic field
Photonics and Semiconductor Nanophysics, Department of Applied Physics, Eindhoven University of Technology, P. O. Box 513, NL-5600 MB Eindhoven, The Netherlands.
Linnaeus University, Faculty of Technology, Department of Physics and Electrical Engineering.
London Center for NanoTechnology, 17-19 Gordon Street, WC1H 0AH, London, U.K..
5Department of Physics, University of New Hampshire, Durham, New Hampshire 03824-3520, USA.
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2013 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 88, p. Article ID: 205203-Article in journal (Refereed) Published
Abstract [en]

We investigate the effect of an external magnetic field on the physical properties of the acceptor hole statesassociated with single Mn acceptors placed near the (110) surface of GaAs. Cross-sectional scanning tunnelingmicroscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. These experimental results are supported bytheoretical calculations based on a tight-binding model of Mn acceptors in GaAs. For Mn acceptors on the (110)surface and the subsurfaces immediately underneath, we find that an applied magnetic field modifies significantlythe magnetic anisotropy landscape. However, the acceptor hole wave function is strongly localized around theMn and the LDOS is quite independent of the direction of the Mn magnetic moment. On the other hand, for Mnacceptors placed on deeper layers below the surface, the acceptor hole wave function is more delocalized andthe corresponding LDOS is much more sensitive on the direction of the Mn magnetic moment. However, themagnetic anisotropy energy for these magnetic impurities is large (up to 15 meV), and a magnetic field of 10 Tcan hardly change the landscape and rotate the direction of the Mn magnetic moment away from its easy axis.We predict that substantially larger magnetic fields are required to observe a significant field dependence of thetunneling current for impurities located several layers below the GaAs surface.

Place, publisher, year, edition, pages
American Physical society , 2013. Vol. 88, p. Article ID: 205203-
National Category
Condensed Matter Physics
Research subject
Physics, Condensed Matter Physics
Identifiers
URN: urn:nbn:se:lnu:diva-19108DOI: 10.1103/PhysRevB.88.205203ISI: 000326822500008Scopus ID: 2-s2.0-84887585936OAI: oai:DiVA.org:lnu-19108DiVA, id: diva2:529578
Available from: 2012-05-30 Created: 2012-05-30 Last updated: 2017-12-07Bibliographically approved
In thesis
1. Magnetic solotronics near the surface of a semiconductor and a topological insulator
Open this publication in new window or tab >>Magnetic solotronics near the surface of a semiconductor and a topological insulator
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Technology where a solitary dopant acts as the active component of an opto-electronic device is an emerging  field known as solotronics, and bears the promise to revolutionize the way in which information is stored, processed and transmitted. Magnetic doped semiconductors and in particular (Ga, Mn)As, the archetype of dilute magnetic semiconductors, and topological insulators (TIs), a new phase of quantum matter with unconventional characteristics, are two classes of quantum materials that have the potential to advance spin-electronics technology. The quest to understand and control, at the atomic level, how a few magnetic atoms precisely positioned in a complex environment respond to external stimuli, is the red thread that connects these two quantum materials in the research presented here.

The goal of the thesis is in part to elucidate the properties of transition metal (TM) impurities near the surface of GaAs semiconductors with focus on their response to local magnetic and electric fields, as well as to investigate the real-time dynamics of their localized spins. Our theoretical analysis, based on density functional theory (DFT) and using tight-binding (TB) models, addresses the mid-gap electronic structure, the local density of states (LDOS) and the magnetic anisotropy energy of individual Mn and Fe impurities near the (110) surface of GaAs. We investigate the effect of a magnetic field on the Mn acceptor LDOS measured in cross-sectional scanning tunneling microscopy, and provide an explanation of why the experimental LDOS images depend weakly on the field direction despite the strongly anisotropic nature of the Mn acceptor wavefunction. We also investigate the effects of a local electrostatic field generated by nearby charged As vacancies, on individual and pairs of ferromagnetically coupled magnetic dopants near the surface of GaAs, providing a means to control electrically the exchange interaction of Mn pairs. Finally, using the mixed quantum-classical scheme for spin dynamics, we calculate explicitly the time evolution of the Mn spin and its bound acceptor, and analyze the dynamic interaction between pairs of ferromagnetically coupled magnetic impurities in a nanoscaled semiconductor.

The second part of the thesis deals with the theoretical investigation of a single substitutional Mn impurity and its associated acceptor state on the (111) surface of Bi2Se3 TI, using an approach that combines DFT and TB calculations. Our analysis clarifies the crucial role played by the spatial overlap and the quasi-resonant coupling between the Mn-acceptor and the topological surface states inside the Bi2Se3 band gap, in the opening of a gap at the Dirac point. Strong electronic correlations are also found to contribute significantly to the mechanism leading to the gap, since they control the hybridization between the p orbitals of nearest-neighbor Se atoms and the acceptor spin-polarization. Our results explain the effects of inversion-symmetry and time-reversal symmetry breaking on the electronic states in the vicinity of the Dirac point, and contribute to clarifying the origin of surface-ferromagnetism in TIs. The promising potential of magnetic-doped TIs accentuates the importance of our contribution to the understanding of the interplay between magnetic order and topological protected surface states.

Place, publisher, year, edition, pages
Linnaeus University Press, 2015. p. 251
Series
Linnaeus University Dissertations ; 211/2015
Keywords
Magnetic solotronics, Transition metal dopants, Dilute magnetism in semiconductors and topological insulators, Atomistic tight-binding models, DFT, Spin dynamics, Magnetic anisotropy, Scanning tunneling microscope.
National Category
Condensed Matter Physics
Research subject
Physics, Condensed Matter Physics
Identifiers
urn:nbn:se:lnu:diva-40398 (URN)978-91-87925-49-8 (ISBN)
Public defence
2015-03-27, Ny227, Kalmar Nyckel, Kalmar, 13:00 (English)
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Available from: 2015-02-25 Created: 2015-02-25 Last updated: 2016-11-01Bibliographically approved

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Mahani, Mohammad RezaCanali, Carlo M.

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