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Modifying current-voltage characteristics of a single molecule junction by isotope substitution: OHOD dimer on Cu(110)
Kyoto University.
Kyoto University.
Kyoto University.
Kyoto University.
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2012 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 85, no 20, Article ID: 205424- p.Article in journal (Refereed) Published
Abstract [en]

Vibrationally induced configurational change and nonlinear current-voltage (I-V) characteristics are investigated within the scanning tunneling microscope (STM) junction, including hydroxyl dimers on a Cu(110) surface. H-bonded hydroxyl dimers composed of OH and/or OD have a unique inclined geometry that can be switched back and forth by vibrational excitations via the inelastic electron tunneling process of the STM. The relative occupation change between the high-and low-conductance states as a function of bias voltage critically depends on the isotopic compositions, and thus the I-V characteristics can be modified to exhibit negative differential resistance by H/D substitution. The experimental results of the occupation change and I-V curves are nicely reproduced using a recently proposed analytical model combined with comprehensive density functional calculations for the input parameters (vibrational modes and their emission rates by tunneling electrons, conductance, and relative occupation change of high-and low-conductance states), and they underlines the different roles played by the free and shared O-H(D) stretch modes of the hydroxyl dimers on a Cu(110) surface.

Place, publisher, year, edition, pages
2012. Vol. 85, no 20, Article ID: 205424- p.
National Category
Condensed Matter Physics
Research subject
Physics, Condensed Matter Physics
Identifiers
URN: urn:nbn:se:lnu:diva-21319DOI: 10.1103/PhysRevB.85.205424OAI: oai:DiVA.org:lnu-21319DiVA: diva2:547354
Available from: 2012-08-27 Created: 2012-08-27 Last updated: 2015-06-18Bibliographically approved

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Paulsson, Magnus
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School of Computer Science, Physics and Mathematics
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