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Hopping Conduction in Mn Ion-Implanted GaAs Nanowires
Lund University.
Lund University.
Jena University.
Lund University.
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2012 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 12, no 9, 4838-4842 p.Article in journal (Refereed) Published
Abstract [en]

We report on temperature-dependent charge transport in heavily doped Mn+-implanted GaAs nanowires. The results clearly demonstrate that the transport is governed by temperature-dependent hopping processes, with a crossover between nearest neighbor hopping and Mott variable range hopping at about 180 K. From detailed analysis, we have extracted characteristic hopping energies and corresponding hopping lengths. At low temperatures, a strongly nonlinear conductivity is observed which reflects a modified hopping process driven by the high electric field at large bias.

Place, publisher, year, edition, pages
2012. Vol. 12, no 9, 4838-4842 p.
Keyword [en]
Mott hopping, nanowires, self-assembly, ion-implantation, GaMnAs, spintronics
National Category
Physical Sciences
Research subject
Physics, Condensed Matter Physics
Identifiers
URN: urn:nbn:se:lnu:diva-22299DOI: 10.1021/nl302318fISI: 000308576000069Scopus ID: 2-s2.0-84866332692OAI: oai:DiVA.org:lnu-22299DiVA: diva2:565212
Available from: 2012-11-06 Created: 2012-11-06 Last updated: 2017-12-07Bibliographically approved

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Canali, Carlo M.

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