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CoFe alloy as middle layer for strong spin dependent quantum well resonant tunneling in MgO double barrier magnetic tunnel junctions
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2013 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 87, no 2, 024411- p.Article in journal (Refereed) Published
Abstract [en]

We report on spin dependent quantum well (QW) resonances in the CoFe alloy middle layer of CoFe/MgO/CoFe/MgO/CoFeB double barrier magnetic tunnel junctions. The dI/dV spectra reveal clear resonant peaks for the parallel magnetization configurations, which can be related to the existence of QW resonances obtained from first-principles calculations. We observe that the differential tunneling magnetoresistance (TMR) exhibits an oscillatory behavior as a function of voltage with a sign change as well as a pronounced TMR enhancement at resonant voltages at room temperature. The observation of strong QW resonances indicates that the CoFe film possesses a long majority spin mean-free path, and the substitutional disorder does not cause a significant increase of scattering. Both points are confirmed by first-principles electronic structure calculation. DOI: 10.1103/PhysRevB.87.024411

Place, publisher, year, edition, pages
2013. Vol. 87, no 2, 024411- p.
National Category
Physical Sciences
Research subject
Physics, Condensed Matter Physics
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URN: urn:nbn:se:lnu:diva-24540DOI: 10.1103/PhysRevB.87.024411ISI: 000313546900002Scopus ID: 2-s2.0-84872965888OAI: oai:DiVA.org:lnu-24540DiVA: diva2:607678
Available from: 2013-02-25 Created: 2013-02-25 Last updated: 2017-12-06Bibliographically approved

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Canali, Carlo M.

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Department of Physics and Electrical Engineering
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