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Effects of spin-orbit interaction in spin-polarized single-electron transistors.
Linnaeus University, Faculty of Science and Engineering, School of Computer Science, Physics and Mathematics. (Condensed Matter Theory)
Linnaeus University, Faculty of Science and Engineering, School of Computer Science, Physics and Mathematics. (Condensed Matter Theory)ORCID iD: 0000-0003-4489-7561
2010 (English)Conference paper, Oral presentation with published abstract (Refereed)
Abstract [en]

We consider a model of an artificial atom with interacting electrons having both spin degrees of freedom and orbital degeneracies. The interaction includes both spin and orbital exchange couplings, which favour a spin polarized ground state with nonzero orbital moment. For the two-electron problem with l=1 orbital degeneracy we enumerate all the eigenstates of the system with and without spin-orbit interaction. We then study quantum transport for the case in which the atom is weakly connected to metallic leads, focusing in particular on the effect of the spin-orbit interaction on the tunnelling conductance. We also discuss how spin-orbit interaction and an external magnetic field influence the conductance when the leads are spin-polarized and tunnelling magneto-resistance is expected.

Place, publisher, year, edition, pages
2010.
National Category
Condensed Matter Physics
Research subject
Physics, Condensed Matter Physics
Identifiers
URN: urn:nbn:se:lnu:diva-27943OAI: oai:DiVA.org:lnu-27943DiVA: diva2:639442
Conference
APS MARCH MEETING 2010
Available from: 2013-08-07 Created: 2013-08-07 Last updated: 2016-11-01Bibliographically approved

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Nossa, JavierCanali, Carlo M.

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