Magnetic polarons and large negative magnetoresistance in GaAs nanowires implanted with Mn ionsShow others and affiliations
2013 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 13, no 11, p. 5079-5084Article in journal (Refereed) Published
Abstract [en]
We report on low-temperature magnetotransport and SQUID measurements on heavily doped Mn-implanted GaAs nanowires. SQUID data recorded at low magnetic fields exhibit clear signs of the onset of a spin-glass phase with a transition temperature of about 16 K. Magnetotransport experiments reveal a corresponding peak in resistance at 16 K and a remarkably large negative magnetoresistance, reaching 40 % at 1.6 K and 8 T. The negative magnetoresistance decreases at elevated temperatures and vanishes at about 100 K. We interpret our transport data in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons forming a paramagnetic/spin-glass phase.
Place, publisher, year, edition, pages
American Chemical Society (ACS), 2013. Vol. 13, no 11, p. 5079-5084
Keywords [en]
Nanowires, self-assembly, ion-implantation, GaMnAs, spintronics, magnetic polarons, spin-glass
National Category
Physical Sciences
Research subject
Physics, Condensed Matter Physics
Identifiers
URN: urn:nbn:se:lnu:diva-28028DOI: 10.1021/nl402229rISI: 000327111700014Scopus ID: 2-s2.0-84887830532OAI: oai:DiVA.org:lnu-28028DiVA, id: diva2:639873
Funder
Swedish Research CouncilKnut and Alice Wallenberg Foundation2013-08-102013-08-102017-12-06Bibliographically approved