lnu.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires
Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund, Sweden;Dept. of Mathematics, Physics and Electrical Engineering, Halmstad University, Box 823, SE-301 18, Halmstad, Sweden .
Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund, Sweden;Dept. of Mathematics, Physics and Electrical Engineering, Halmstad University, Box 823, SE-301 18, Halmstad, Sweden .
Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund, Sweden.
Institute for Solid State Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, D-07743 Jena, Germany.
Show others and affiliations
2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 104, p. Article ID: 153112-Article in journal (Refereed) Published
Abstract [en]

We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (~0.0001%) exhibit a low resistance of a few kΩ at 300K and a 4% positive MR at 1.6K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several MΩ at 300K and a large negative MR of 85% at 1.6K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga1-xMnxAs nanowires for future nanospintronics.

Place, publisher, year, edition, pages
2014. Vol. 104, p. Article ID: 153112-
National Category
Condensed Matter Physics
Research subject
Physics, Condensed Matter Physics
Identifiers
URN: urn:nbn:se:lnu:diva-33558DOI: 10.1063/1.4870423ISI: 000335145200060Scopus ID: 2-s2.0-84899622402OAI: oai:DiVA.org:lnu-33558DiVA, id: diva2:709710
Available from: 2014-04-02 Created: 2014-04-02 Last updated: 2017-12-05Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopushttp://scitation.aip.org/content/aip/journal/apl/104/15/10.1063/1.4870423

Authority records BETA

Canali, Carlo M.Pertsova, Anna

Search in DiVA

By author/editor
Canali, Carlo M.Pertsova, Anna
By organisation
Department of Physics and Electrical Engineering
In the same journal
Applied Physics Letters
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 155 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf