Wide band gap materials such as SiC, AlN, GaN, ZnO, and diamond have excellent properties such as high operation temperature when

used as field effect devices and a high resonating frequency of the substrate materials used in piezoelectric resonator devices. Integration of FET

and resonating sensors on the same chip enables powerful miniaturized devices, which can deliver increased information about a gas mixture or

complex liquid. Examples of sensor devices based on different wide band gap materials will be given.