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Effects of spin-orbit interaction in spin-polarized single-electron transistors.
Linnaeus University, Faculty of Science and Engineering, School of Computer Science, Physics and Mathematics. (Condensed Matter Theory)ORCID iD: 0000-0001-8162-6993
Linnaeus University, Faculty of Science and Engineering, School of Computer Science, Physics and Mathematics. (Condensed Matter Theory)ORCID iD: 0000-0003-4489-7561
2010 (English)In: APS MARCH MEETING 2010, 2010Conference paper, Oral presentation with published abstract (Refereed)
Abstract [en]

We consider a model of an artificial atom with interacting electrons having both spin degrees of freedom and orbital degeneracies. The interaction includes both spin and orbital exchange couplings, which favour a spin polarized ground state with nonzero orbital moment. For the two-electron problem with l=1 orbital degeneracy we enumerate all the eigenstates of the system with and without spin-orbit interaction. We then study quantum transport for the case in which the atom is weakly connected to metallic leads, focusing in particular on the effect of the spin-orbit interaction on the tunnelling conductance. We also discuss how spin-orbit interaction and an external magnetic field influence the conductance when the leads are spin-polarized and tunnelling magneto-resistance is expected.

Place, publisher, year, edition, pages
2010.
National Category
Condensed Matter Physics
Research subject
Physics, Condensed Matter Physics
Identifiers
URN: urn:nbn:se:lnu:diva-27943OAI: oai:DiVA.org:lnu-27943DiVA, id: diva2:639442
Conference
APS MARCH MEETING 2010
Available from: 2013-08-07 Created: 2013-08-07 Last updated: 2023-08-09Bibliographically approved

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Nossa, JavierCanali, Carlo M.

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